Nitride Surfaces and Interfaces (EM+SS-ThM)
Thursday, Oct 21 2010 8:00AM, Room Dona Ana
Moderated by: Roman Engel-Herbert, Penn State University
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8:00 AMEM+SS-ThM-1Recent Advances in the MOCVD Growth of III-N Light Emitting Diodes
8:40 AMEM+SS-ThM-3Microstructural Comparison of InGaN/GaN Multi Quantum Wells Grown on SiC and GaN Substrates
9:00 AMEM+SS-ThM-4Switching GaN Polarity on Homoepitaxial Substrates
9:20 AMEM+SS-ThM-5Studies of InGaN Growth Morphology and Its Relationship to Multiple Quantum Well Luminescence
9:40 AMEM+SS-ThM-6High-Quality, Large-Area, and Free-Standing GaN Epilayer Growth and Liftoff using Self-Assembled Interlayer of Silica Microspheres
10:40 AMEM+SS-ThM-9GaN(0001) Surface at Various Conditions: Fundamental Properties and Basic Dynamic Processes - Ab Initio Study
11:20 AMEM+SS-ThM-11Surface Photovoltage Behavior for p-type vs. n-type GaN
11:40 AMEM+SS-ThM-12Investigation of the Structure of GaN(0001) Pseudo-1x1 Structure at Low Temperature
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