ALD/ALE 2025 Wednesday Morning

Atomic Layer Deposition for Highly Durable Hydrogen Fuel Cells: from Catalyst to Cell

Interfacial Properties of ALD-Grown In₂S₃ Catalysts in CO₂ Electroreduction

Scaling Up Platinum on Carbon Catalyst Fabrication for Proton Exchange Membrane Water Electrolysis

Platinum Promoted Cobalt based Fischer-Tropsch Thin-Film Catalysts

Selectively Located Pt Clusters on Au/CeO₂ for Highly Robust Water-Gas Shift Reaction via Atomic Layer Deposition

Fluorine-Free and Freestanding Bipolar Membranes Based on Metal-Oxide Ald-Coated Electrospun Nanofibers for Water Electrolysis and Fuel Cells

Efficient Alkaline Hydrogen Evolution Reaction with Iridium Nanostructures synthesized by Atomic Layer Deposition

Remarkable Productivity and Performance of OLED Encapsulation through Growth Dynamics Control via Atmospheric Pressure Spatial Atomic Layer Deposition

Crystallinity Control through Composition Engineering for High-Performance MgIn_xO_y TFTs via Thermal Atomic Layer Deposition

Nitrogen-Doped SiO₂ Gate Insulator for Enhanced Stability in ALD-IGZO TFTs

Engineering Hydrogen Content in SiN_X Thin Films via Precursor Control for Improved Oxide TFTs Characteristics

Remarkable Stability and Hydrogen Resistance on High-Mobility Oxide TFTs via N₂O Plasma Reactant in Atomic Layer Deposition

Highly Stable Fluorine-Anion Engineered ALD Indium Oxide Thin-Film Transistors towards BEOL Integration

High-Pressure Atomic Layer Deposition of Elemental Tellurium for Enhanced P-Type Semiconductors

Ultrathin Sn-Doped in₂O₃ Films for Scalable Semiconductor Transistors

Using Area-Selective Ald for Dual Site Catalysis for Photocatalytic Water Splitting

Impact of Tetrakis(dimethylamido)tin(IV) Degradation on Atomic Layer Deposition of Tin Oxide Films and Perovskite Solar Cells

Ultrathin Oxygen Deficient SnOx Films as Electron Extraction Layers for Perovskite Solar Modules

Charge Transport Layers Rafted by Atomic Layer Deposition for Large-Area Perovskite-Based Solar Modules

High Crystallinity Yttrium-Doped ZrO2 under 2 nm Through Atomic Layer Modulation

ALD Outstanding Presentation Award Finalist: Ultrahigh Purity Plasma-Enhanced Atomic Layer Deposition and Electrical Properties of Epitaxial Scandium Nitride

Microwave Enhanced (ME) ALD of HfO₂

Atomic Level Engineering of Dy-doped HfO2 Ultra-thin Films via Controlling Lateral and Vertical Mixing

Process-Structure-Properties of Atomic Layer Deposited Niobium Nitride and Evolution of Strain with Plasma Chemistry

Centering Sustainability in Future Plasma-Enhanced ALE Processes

Cryogenic ALE of SiO₂ using CF₄ Plasma

Atomic Layer Etching of Indium Oxide Thin Films via Ligand Addition and O₂ Plasma Reactions

Development of a Novel Magnetically-Confined Plasma Source for Advanced Semiconductor Manufacturing

In-Situ Observation of Surface Reaction and Advanced Process for Damage-Less Atomic Layer Etching

Isotropic ALE of 2D Crystalline MoS₂ using SF₆:H₂ Plasma and O₂ Plasma

Enhanced Plasma Ignition and Sustaining of Transformer-Coupled Plasma Source with a Secondary Coil

Area-selective ALD of ZnS on Atomic Layer Etched (ALE) Substrates via Growth Modulation

Passivation of Nitride Surface Using Aldehyde Inhibitor for Area Selective Atomic Layer Deposition of SiNx on Oxide Surface

Blocking Effects of Small Molecule Inhibitors in Atomic Layer Deposition: An Off-lattice Kinetic Monte Carlo Study

Controlling the Surface Chemistry of Silicon Nitride Using a Plasma Pretreatment for Area-Selective Deposition

Enhancing Area Selective Deposition Through Sub-saturated ALD: A Pathway to High Volume Manufacturing

Inherent Area-Selective Deposition of Low-Resistivity Molybdenum Carbide Films by Thermal Atomic Layer Deposition

Molecular Design of ALD Precursors Through Atomic-Level Simulation and Their Reactivity Analysis

Industrial ALD/ASD Perspectives: Atomic Level Process Control for Semiconductor Devices

Area-Selective Deposition for Dielectric Films on Metal Substrates: Coupon to Full Wafer

Redox-coupled Inherently Selective Atomic Layer Deposition of SiO₂ on SiO₂/Si₃N₄ for 3D NAND structure

Area-selective Atomic Layer Deposition of Ruthenium via Plasma Surface Modification