NAMBE2019 Tuesday Afternoon
Sessions | Time Periods | Topics | Schedule Overview
Hover over a paper or session to view details. Click a Session in the first column to view session papers.
| Session | Tuesday, September 24, 2019 | ||||||||||||||
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| 1:30 PM | 2:30 PM | 3:30 PM | |||||||||||||
| MBE-1TuA |
MBE Young Investigator Award Winner: TBD
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Band Engineering to Achieve a Wide Band Gap Topological Insulator
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Van der Waal Epitaxy of Bi2Se3 on GaAs: A Morphological Playground
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Growth of GeTe and Sb2Te3 Interlayer Structures for Interfacial Phase Change Devices via Molecular Beam Epitaxy
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Molecular Beam Epitaxy of Hexagonal Boron Nitride on HOPG
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| MBE-2TuA |
InAs Chirped Quantum Dot Growth on Si for Broadband Spectral Gain Mode-locked Laser
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InP Quantum Dots for Dislocation-tolerant, Visible Light Emitters on Si
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Gallium-assisted Deoxidation for Spatially and Spectrally Controlled InAs Quantum Dot Molecules
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Influence of the Growth Conditions on the Performance of InAs Sub-Monolayer Quantum Dot Infrared Photodetectors
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Effect of Annealing on Structure and Luminescence of InP/AlGaInP Quantum Dots
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Structural and Optical Properties of GaAs(111)A Tensile-strained Quantum Dots using As2 and As4
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Comparing the Self-assembly of Tensile-strained Ge and GaAs Quantum Dots on InAlAs(111)A
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