NAMBE 2025 Monday Afternoon
Sessions | Time Periods | Topics | Schedule Overview
Hover over a paper or session to view details.
Click a Session in the first column to view session papers.
| Session | Monday, August 25, 2025 | ||||||||||||||
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| 1:30 PM | 2:30 PM | 3:30 PM | 4:30 PM | ||||||||||||
| NAMBE1-MoA |
ErAs/Semiconductor Nanocomposites for 1.55 μm-Pumped and Hybrid Terahertz Photoconductive Switches
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Regrowth of Gasb Photonic Crystal Surface-Emitting Lasers by Molecular Beam Epitaxy
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Growth and Optimization of Opto-electronic performance of InGaAsSb Photodetectors using Molecular Beam Epitaxy
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Growth-Temperature Effect on Group-V Compositions in ‘W’ Structured GaAsSb/InGaAs/GaAsP Quantum Wells
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III-V Quantum Dot Lasers and Photodetectors Monolithically Integrated with Silicon Photonics by Two-Step Growth
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Optical Enhancement of GaAsP Solar Cells on GaP/Si with Distributed Bragg Reflectors
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Interface Fermi-Level Engineering for Selective Hole Extraction Without P-Type Doping in CdTe Solar Cells to Reach High Open Circuit Voltage (>1 V)
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BREAK & EXHIBITS
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| NAMBE2-MoA |
James S. Harris MBE Scientific Discovery Awardee Talk: Breaking the Rules: Perturbing Oxides to Unleash Novel Properties
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Deep Level Transient Spectroscopy and Time-Resolved Photoluminescence as a Function of Room Temperature 63 MeV Proton Irradiation of Inas Nbn Detectors Grown by Molecular Beam Epitaxy
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Evaluation of the Optical Absorption Properties of MBE Grown InAs/InAsSb and InGaAs/InAsSb Superlattices for Infrared Photodetector Applications
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Tunable Low-Loss Plasmonic Resonances in Heavily-Doped InAs for Infrared Optoelectronic Devices
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Impact of Uncracked Group V Species on Unintentional Doping in AlInAsSb
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