ALD/ALE 2022 Tuesday Morning
Sessions | Time Periods | Topics | Schedule Overview
        Hover over a paper or session to view details.
        Click a Session in the first column to view session papers.
    
    
| Session | Tuesday, June 28, 2022 | ||||||
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| 10:45 AM | 11:45 AM | ||||||
| AA1-TuM2 | 
                                    Plasma-assisted ALD of IrO2 for Neuroelectronic Applications
                                    
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                                    Atomic Layer Deposition (Ald) on 5-Aminosalicylic Acid for Delayed and Targeted Drug Release Treatment of Inflammatory Bowel Disease
                                    
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                                    Atomic Layer Deposition Enables Dimensionless, Biocompatible Encasings for Medical Implants Pro-Longing Their Lifetime
                                    
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| AA2-TuM2 | 
                                    High ALD Equipment and Precursor Demand and 5-Year Forecast Due to Continued Semiconductor Device Scaling and Fab Expansions
                                    
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                                    High-k Gate Dielectrics for ScAlN Barrier HEMT Structures
                                    
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                                    Ultra-thin High-κ Dielectrics Growth by ALD on MoS2
                                    
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                                    Fabrication of a MOSFET Based on ZnO Using an Atomic Layer 3D-printer
                                    
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| AF-TuM2 | 
                                    Theoretical Understanding on the Chemical Principles of Atomic Layer Deposition
                                    
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                                    A Study of Area-Selective TiO2 Deposition Using First Principles Based Thermodynamic Simulations
                                    
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                                    Chemistry of Plasma Enhanced Atomic Layer Deposition of Co using CoCp2 and Nitrogen/Hydrogen Plasma
                                    
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                                    Adsorption Mechanics of Trimethyl Metal Precursors on AlN, GaN and InN
                                    
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| ALE-TuM2 | 
                                    Atomic Layer Processing Approach for Achieving Abrupt Epitaxial Interfaces on AlN
                                    
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                                    Surface Modification for Atomic Layer Etching of TiAlC Using Floating Wire-Assisted Liquid Vapor Plasma at Medium Pressure
                                    
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