IWGO 2026 Friday Morning
Sessions | Time Periods | Topics | Schedule Overview
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Click a Session in the first column to view session papers.
| Session | Friday, August 7, 2026 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 8:00 AM | 9:00 AM | 10:00 AM | 11:00 AM | 12:00 PM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IWGO-FrM1 |
Breakfast
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PLENARY: Scaling Ga2O3 Power Electronics: From 10 kV Devices to Megawatt Modules
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Formation of High-Quality SiO2/β-Ga2O3 MOS Structures: Design and Optimization of Post-Annealing Processes
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Analysis of Packaged Ga2O3 Schottky Barrier Diodes (SBDs) for AC Rectification at Industrial Voltages
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2.2 kV NiO Based JTE β-Ga2O3 Schottky Barrier Diode with Improved Reliability under High-Temperature Storage Stress
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>1 GW/cm2 β-Ga2O3 NiOx Heterojunction Diodes on MOCVD-Grown (110) and (010) Epilayers
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COFFEE BREAK
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| IWGO-FrM2 |
High-Performance β-Ga2O3 Vertical Diodes and FinFETs with High Electric Field Strength
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Diffusion Suppression of Mg and High Performance β-Ga2O3 Current Blocking Layers by N+Mg Co-Doping Approach
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>3.3 kV Ga2O3 Monolithic Bidirectional Switch: Impact of NiO/Ga2O3 Interface Charges
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Closing Remarks
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