NAMBE 2025 Tuesday Morning
Sessions | Time Periods | Topics | Schedule Overview
Hover over a paper or session to view details.
Click a Session in the first column to view session papers.
| Session | Tuesday, August 26, 2025 | |||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 8:00 AM | 9:00 AM | 10:00 AM | 11:00 AM | |||||||||||||
| NAMBE1-TuM |
NAMBE Young Investigator Awardee Talk: Problem? Add an Element! The Series of Events that brought us to GalnAsSbBi
|
Exploring MBE Deposited Superconductor Bilayers to Control Qubit Base Material Properties
|
Exploring Arsenic Flux-Induced Surface Morphology Control in InAs/GaInSb Quantum Wells for Spintronic and Quantum Applications
|
Molecular Beam Epitaxy Growth of InAs1-xBix on GaSb for Topological Insulating States
|
Group IV Superconductor-Semiconductor Epitaxy for Integrated Quantum Electronics
|
Characterization and Thermal Behavior of Epitaxial Aluminum Films on InGaAs for Topological Qubits
|
Synthesis and Temperature-Dependent Momentum Microscopy of Type-II Dirac Semimetal NiTe₂
|
BREAK & EXHIBITS
|
||||||||
| NAMBE2-TuM |
Kilo-Volt Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)
|
Limitations and Effects of Heavy Metal Doping in GaN
|
Investigation of Composition Fluctuations and Band Tail States in Plasma Assisted MBE-Grown High Al-Fraction AlGaN
|
Sc-Rich Monocrystalline ScGaN Grown by MBE Exhibits Attractive Ferroelectric Properties
|
Towards High Wall-Plug Efficiency Nanowire-based Red Micro-LEDs
|
High Permittivity Epitaxial BaTiO3 Thin Films on AlGaN/GaN Heterostructures for RF Electronics
|
||||||||||